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| Ordering number : ENN8029 2SC5999 2SC5999 Applications * NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, lamp drivers, motor drivers, inverters. Features * * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings 120 120 50 6 25 40 2 1.65 40 150 --55 to +150 Unit V V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=100V, IE=0 VEB=4V, IC=0 VCE=2V, IC=1A VCE=2V, IC=15A 200 150 Conditions Ratings min typ max 10 10 560 Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404FA TS IM TB-00000425 No.8029-1/4 2SC5999 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=10A, IB=500mA IC=10A, IB=500mA IC=100A, IE=0 IC=100A, RBE=0 IC=1mA, RBE= IE=100A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 120 120 50 6 230 1300 40 Ratings min typ 170 150 0.93 300 1.4 max Unit pF mV V V V V V ns ns ns Package Dimensions unit : mm 2069C 0.8 Switching Time Test Circuit 10.2 4.5 PW=20s D.C.1% 1.3 IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=20V RB INPUT 9.9 1.5max 8.8 RL 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD IC=20IB1= --20IB2=4A 2.55 2.55 2.7 16 14 IC -- VCE 50m A 45mA 40mA 35mA 25 IC -- VCE 25 0 mA 200 mA 150mA 100mA Collector Current, IC -- A 12 10 25mA 20mA 8 6 4 Collector Current, IC -- A 30mA 20 15 50mA 15mA 10mA 5mA 10 5 2 0 0 2 4 6 8 IB=0 10 IT07555 0 0 1 2 3 4 IB=0 5 IT07556 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.8029-2/4 2SC5999 30 IC -- VBE VCE=2V 1000 7 5 hFE -- IC VCE=2V 25 Collector Current, IC -- A 20 DC Current Gain, hFE Ta=75C 25C 3 15 --25C 2 5 Ta= 75 C 25 C --25 C 10 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT07557 7 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 Base-to-Emitter Voltage, VBE -- V 7 5 VCE(sat) -- IC Collector Current, IC -- A IT07558 VCE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.01 3 2 C 25 = Ta 25C --25C C 75 0.1 7 5 3 2 75 C Ta = 5 --2 C C 25 --2 5 C Ta=75C 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 25C --25C 0.01 0.01 Ta=75C 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Collector Current, IC -- A 3 IT07559 1000 7 VBE(sat) -- IC Collector Current, IC -- A IT07560 Cob -- VCB IC / IB=20 Output Capacitance, Cob -- pF f=1MHz Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 5 1.0 7 5 3 2 25C Ta= --25C 3 2 75C 100 7 0.1 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IC=25A 10 50 Collector Dissipation, PC -- W 100 7 5 3 2 Forward Bias A S O ICP=40A 50s 10 s 0 Collector Current, IC -- A IT07561 1.8 1.65 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Collector-to-Base Voltage, VCB -- V 5 7 100 IT07562 PC -- Ta 0m s DC 0 s m 10 s op er ati on N o 1m s he at sin k 0.01 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT07563 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C IT07564 No.8029-3/4 2SC5999 45 40 PC -- Tc Collector Dissipation, PC -- W 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT07565 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8029-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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